2001. 9. 14
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTA733B
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 2
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Excellent h
FE
Linearity.
: h
FE
(I
C
=0.1mA)/h
FE
(I
C
=2mA)=0.95(Typ.)
Low Noise : NF=1dB(Typ.). at f=1kHz
Complementary to KTC945B.
MAXIMUM RATING (Ta=25 )
TO-92
DIM
MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2
3
B
A
J
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAX
M
1.00
N
1. EMITTER
3. COLLECTOR
2. BASE
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-60
V
Collector-Emitter Voltage
V
CEO
-50
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-150
mA
Collector Power Dissipation
P
C
625
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=-100 A, I
E
=0
-60
-
-
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-1mA, I
B
=0
-50
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=-100 A, I
C
=0
-5
-
-
V
Collector Cut-off Current
I
CBO
V
CB
=-50V, I
E
=0
-
-
-0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-0.1
A
DC Current Gain
h
FE
(Note)
V
CE
=-6V, I
C
=-2mA
70
-
400
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-100mA, I
B
=-10mA
-
-0.1
-0.3
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=-100mA, I
B
=-10mA
-
-
-1.1
V
Transition Frequency
f
T
V
CE
=-10V, I
C
=-10mA
-
300
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
4
7
pF
Noise Figure
NF
V
CE
=-6V, I
C
=-0.1mA Rg=10k , f=1kHz
-
1.0
10
dB
Note : h
FE
Classification O:70 140, Y:120 240, GR:200 400
2001. 9. 14
2/2
KTA733B
Revision No : 2
COLLECTOR CURRENT I (mA)
0
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CE
C
I - V
COLLECTOR POWER DISSIPATION
0
C
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
30
DC CURRENT GAIN h
FE
-0.1
COLLECTOR CURRENT I (mA)
C
h - I
V - I
C
COLLECTOR CURRENT I (mA)
-0.1
-10
CE(sat)
COLLECTOR-EMITTER SATURATION
BASE CURRENT I (
A)
B
-0.3
0
BASE-EMITTER VOLTAGE V (V)
BE
I - V
-1
-2
-3
-4
-5
-6
-7
-40
-80
-120
-160
-200
-240
COMMON EMITTER
Ta=25 C
-2.0
-1.5
-1.0
-0.5
I =-0.2mA
0
B
FE
C
-0.3
-1
-3
-10
-30
-100
-300
50
100
300
500
1k
3k
3k
1k
500
300
100
50
-300
-100
-30
-10
-3
-1
-0.3
C
T
f - I
C
COLLECTOR CURRENT I (mA)
-0.1
T
TRANSITION FREQUENCY f (MHz)
30
COMMON
EMITTER
Ta=100 C
Ta=25 C
Ta=-25 C
V =-6V
CE
CE(sat)
C
VOLTAGE V (mV)
-0.3
-1
-3
-10
-30
-100
-300
-30
-50
-100
-300
-500
-1k
COMMON EMITTER
I /I =10
C B
Ta=100 C
Ta=25 C
Ta=-25 C
COMMON EMITTER
V =-10V
Ta=25 C
CE
B
BE
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1
-3
-10
-30
-100
-300
-1k
COMMON EMITTER
V =-6V
CE
Ta=10
0 C
Ta=25 C
Ta=-25
C
P (mW)
25
50
75
100
125
150
175
100
200
300
400
500
600
700
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